3

TC2320

Sym

Parameter

Min

Typ

Max

Units

Conditions

BV

DSS

Drain-to-source breakdown voltage

-200

-

-

V

V

V

GS(th)

Gate threshold voltage

-1.0

-

-2.4

V

V

ΔV

GS(th)

Change in V

-

-

4.5

I

GSS

Gate body leakage

-

-

-100

nA

V

I

DSS

Zero gate voltage drain current

-

-

-10

µA

V

-

-

-1.0

mA

V

O

C,

V

I

D(ON)

On-state drain current

-0.25

-0.7

-

A

V

-0.75

-2.1

-

V

R

DS(ON)

Static drain-to-source on-state

resistance

-

10

15

Ω

V

-

8.0

12

V

ΔR

DS(ON)

Change in R

-

-

1.7

V

G

FS

Forward transconductance

100

250

-

mmho V

C

ISS

Input capacitance

-

75

125

pF

V

V

f = 1.0MHz

C

OSS

Common source output capacitance

-

20

85

C

RSS

Reverse transfer capacitance

-

10

35

t

d(ON)

Turn-on delay time

-

-

10

ns

V

I

R

t

r

Rise time

-

-

15

t

d(OFF)

Turn-on delay time

-

-

20

t

f

Fall time

-

-

15

V

SD

Diode forward voltage drop

-

-

-1.8

V

V

t

rr

Reverse recovery time

-

300

-

ns

V

Notes:

All A.C. parameters sample tested.

1.

2.

P-Channel Switching Waveforms and Test Circuit

90%

10%

90%

90%

10%

10%

PULSE

GENERATOR

Output

D.U.T.

INPUT

INPUT

OUTPUT

0V

0V

-10V