2SB435 datasheet(1/2 Pages) ISC

部件名	2SB435

功能描述	isc Silicon PNP Power Transistor

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

1

isc Silicon PNP Power Transistor

2SB435

DESCRIPTION

·

Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= -50V(Min)

·

Low Collector Saturation Voltage-

: VCE(sat)= -1.0V(Max.) @IC= -1A

·

Complement to Type 2SD235

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for low frequency power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-40

V

VCEO

Collector-Emitter Voltage

-40

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-3

A

IB

Base Current-Continuous

-0.3

A

PC

Collector Power Dissipation

@Ta=25℃

1.5

W

Collector Power Dissipation

@Tc=25℃

25

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

类似零件编号 - 2SB435

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