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1998

©

Document No. D15594EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

DARLINGTON POWER TRANSISTOR

2SC4351

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)

FOR HIGH-SPEED SWITCHING

DATA SHEET

2002

The 2SC4351 is a high-speed Darlington power transistor. This

transistor is ideal for high-precision control such as PWM control for

pulse motors or blushless motor of OA and FA equipment.

FEATURES

• Mold package that does not require an insulating board or

insulation bushing

• On-chip C to B constant voltage diode for surge voltage

absorption

• On-chip C to E reverse diode

• Fast switching speed

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

60

± 10

V

Collector to emitter voltage

60

± 10

V

Emitter to base voltage

8.0

V

Collector current (DC)

±5.0

A

Collector current (pulse)

±10

A

Base current (DC)

0.5

A

Total power dissipation

°C)

20

W

Total power dissipation

°C)

2.0

W

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

*PW

≤ 10 ms, duty cycle ≤ 50%

PACKAGE DRAWING (UNIT: mm)

Electrode Connection

1. Base

2. Collector

3. Emitter