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74LVC2G34 数据表(PDF) 2 Page - NXP Semiconductors |
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74LVC2G34 数据表(HTML) 2 Page - NXP Semiconductors |
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2 / 13 page ![]() 2004 Sep 10 2 Philips Semiconductors Product specification Dual buffer gate 74LVC2G34 FEATURES • Wide supply voltage range from 1.65 V to 5.5 V • 5 V tolerant input/output for interfacing with 5 V logic • High noise immunity • Complies with JEDEC standard: – JESD8-7 (1.65 V to 1.95 V) – JESD8-5 (2.3 V to 2.7 V) – JESD8B/JESD36 (2.7 V to 3.6 V). • ESD protection: – HBM EIA/JESD22-A114-B exceeds 2000 V – MM EIA/JESD22-A115-A exceeds 200 V. •±24 mA output drive (VCC = 3.0 V) • CMOS low power consumption • Latch-up performance exceeds 250 mA • Direct interface with TTL levels • Multiple package options • Specified from −40 °C to +85 °C and −40 °C to +125 °C. DESCRIPTION The 74LVC2G34 is a high-performance, low-power, low-voltage, Si-gate CMOS device and superior to most advanced CMOS compatible TTL families. Inputs can be driven from either 3.3 V or 5 V devices. These feature allows the use of these devices as translators in a mixed 3.3 V and 5 V environment. This device is fully specified for partial power-down applications using Ioff. The Ioff circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. The 74LVC2G34 provides two buffers. QUICK REFERENCE DATA GND = 0 V; Tamb =25 °C. Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi × N+ ∑(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total load switching outputs; ∑(CL × VCC2 × fo) = sum of outputs. 2. The condition is VI = GND to VCC. SYMBOL PARAMETER CONDITIONS TYPICAL UNIT tPHL/tPLH propagation delay input nA to output nY VCC = 1.8 V; CL = 30 pF; RL =1kΩ 3.8 ns VCC = 2.5 V; CL = 30 pF; RL = 500 Ω 2.4 ns VCC = 2.7 V; CL = 50 pF; RL = 500 Ω 2.5 ns VCC = 3.3 V; CL = 50 pF; RL = 500 Ω 2.2 ns VCC = 5.0 V; CL = 50 pF; RL = 500 Ω 1.9 ns CI input capacitance 2.5 pF CPD power dissipation capacitance VCC = 3.3 V; notes 1 and 2 20 pF |
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