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STB120NF10 数据表(PDF) 1 Page - STMicroelectronics |
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STB120NF10 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 10 page ![]() 1/10 May 2003 STB120NF10 STP120NF10 N-CHANNEL 100V - 0.009 Ω - 120A D²PAK/TO-220 STripFET™ II POWER MOSFET s TYPICAL RDS(on) = 0.009 Ω s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s APPLICATION ORIENTED CHARACTERIZATION s SURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4") DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize the on-resistance. It is therefore suitable as primary switch in advanced high-efficiency, high- frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. APPLICATIONS s AUDIO AMPLIFIERS s POWER TOOLS TYPE VDSS RDS(on) ID STB120NF10 STP120NF10 100 V 100 V < 0.0105 Ω < 0.0105 Ω 120 A 120 A 1 2 3 TO-220 1 3 D2PAK TO-263 (Suffix “T4”) INTERNAL SCHEMATIC DIAGRAM Ordering Information ABSOLUTE MAXIMUM RATINGS ( •) Pulse width limited by safe operating area. (1) ISD ≤120A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Starting Tj = 25 oC, ID = 60A, VDD = 50V SALES TYPE MARKING PACKAGE PACKAGING STB120NF10 STP120NF10 B120NF10 P120NF10 TO-263 TO-220 TAPE & REEL TUBE Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 100 V VGS Gate- source Voltage ± 20 V ID Drain Current (continuous) at TC = 25°C 120 A ID Drain Current (continuous) at TC = 100°C 85 A IDM(•) Drain Current (pulsed) 480 A Ptot Total Dissipation at TC = 25°C 312 W Derating Factor 2.08 W/°C dv/dt (1) Peak Diode Recovery voltage slope 10 V/ns EAS(2) Single Pulse Avalanche Energy 550 mJ Tstg Storage Temperature -55 to 175 °C Tj Operating Junction Temperature |
类似零件编号 - STB120NF10 |
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类似说明 - STB120NF10 |
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