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BFP740FESD 数据表(PDF) 9 Page - Infineon Technologies AG

部件名 BFP740FESD
功能描述  Robust Low Noise Silicon Germanium Bipolar RF Transistor
PDF  28 Pages
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制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

BFP740FESD 数据表(HTML) 9 Page - Infineon Technologies AG

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BFP740FESD
Maximum Ratings
Data Sheet
9
Revision 1.2, 2012-10-11
3
Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Table 3-1
Maximum Ratings at
T
A = 25 °C (unless otherwise specified)
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Max.
Collector emitter voltage
VCEO
Open base
–4.2
V
TA = 25 °C
–3.7
V
TA = -55 °C
Collector emitter voltage1)
1) Low VCBO due to integrated protection circuits
VCBO
Open emitter
–4.9
V
TA = 25 °C
–4.4
V
TA = -55 °C
Collector emitter voltage2)
2) VCES is identical to VCEO due to integrated protection circuits.
VCES
E-B short circuited
–4.2
V
TA = 25 °C
–3.7
V
TA = -55 °C
Base current3)
3) Sustainable reverse bias current is high due to integrated protection circuits.
IB
-10
5
mA
Collector current
IC
–45
mA
RF input power4)
4) RF input power is high due to integrated protection circuits.
PRFin
–21
dBm
ESD stress pulse5)
5) ESD robustness is high due to integrated protection circuits.
VESD
-2
2
kV
HBM, all pins, acc. to
JESD22-A114
Total power dissipation6)
6) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb.
Ptot
–160
mW
TS ≤ 100 °C
Junction temperature
TJ
–150
°C
Storage temperature
TStg
-55
150
°C



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