2SA562 datasheet(2/2 Pages) ISC

部件名	2SA562

功能描述	isc Silicon PNP Power Transistor

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

标志

2 / 2 page

INCHANGE Semiconductor

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

isc Silicon PNP Power Transistor

2SA562

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V(BR)CBO

Collector-base breakdown voltage

IC=-100μA, IE=0

-35

V(BR)CEO

Collector-emitter breakdown voltage

IC=-1mA , IB=0

-30

V(BR)EBO

Emitter-base breakdown voltage

IE= -100μA, IC=0

-5

VCE(sat)

Collector-Emitter Saturation Voltage

IC=-100mA; IB= -10mA

-0.25

VBE(on)

base-emitter voltage

IC= -100mA;VCE= -1V

-1.0

ICBO

collector cut-off current

VCB =-35 V,IE = 0

-0.1

IEBO

Emitter Cutoff Current

VEB=-5V; IC=0

-0.1

hFE-1

DC Current Gain

IC= -0.1A ; VCE=- 1V

240

hFE-2

DC Current Gain

IC=-0.4A ; VCE= -6V

Classification of hFE1

Rank

hFE-1

70-140

120-240

hFE-2

25min

40min

2SA562 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

2SA562 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

Html Pages

1 2

数据表下载

链接网址

2SA562 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

2SA562 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

Html Pages

1 2

数据表 下载

链接网址

数据表下载