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MBR0520WS 数据表(PDF) 3 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
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MBR0520WS 数据表(HTML) 3 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
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3 / 5 page ![]() SANGDEST MICROELECTRONICS Technical Data Green Products Data Sheet N1659 Rev. - • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR0520WS Maximum Ratings and Electrical Characteristics Maximum Ratings: Characteristics Symbol Condition Max. Units Repetitive Peak Reverse Voltage VRRM - 20 V Average Forward Current IF (AV) 50% duty cycle @ TA=55°C, rectangular wave form 0.5 A Peak One Cycle Non- Repetitive Surge Current (Per leg) IFSM 8.3ms, Half Sine pulse 10 A Electrical Characteristics: Characteristics Symbol Condition Max. Units Forward Voltage Drop* VF @ 0.5A, Pulse, TJ = 25°C 0.45 V Reverse Current* IR1 @VR = rated VR TJ = 25°C 100 μA Junction Capacitance CJ @V B R B = 5V, T B C B = 25 °C f B SIG B = 1MHz 75 pF * Pulse width < 300 µs, duty cycle < 2% Thermal-Mechanical Specifications: Characteristics Symbol Condition Specification Units Junction Temperature TJ - -55 to +125 °C Storage Temperature Tstg - -55 to +150 °C Maximum Thermal Resistance Junction to Ambient RθJA DC operation 120 °C/W Case Style SOD-323 |
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