BSC019N04LS datasheet(3/13 Pages) INFINEON

3 / 13 page

OptiMOSTMPower-MOSFET,40V

BSC019N04LS

Rev.2.1,2016-05-24

Final Data Sheet

1Maximumratings

atTA=25°C,unlessotherwisespecified

Table2Maximumratings

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Continuous drain current

100

VGS=10V,TC=25°C

VGS=10V,TC=100°C

VGS=4.5V,TC=25°C

VGS=4.5V,TC=100°C

VGS=10V,TA=25°C,RthJA=50K/W1)

Pulsed drain current

ID,pulse

400

TC=25°C

Avalanche energy, single pulse

EAS

ID=50A,RGS=25

Ω

Gate source voltage

VGS

-20

Power dissipation

Ptot

2.5

TC=25°C

TA=25°C,RthJA=50K/W1)

Operating and storage temperature

Tj,Tstg

-55

150

°C

IEC climatic category;

DIN IEC 68-1: 55/150/56

2Thermalcharacteristics

Table3Thermalcharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Thermal resistance, junction - case,

bottom

RthJC

1.0

1.6

K/W

Thermal resistance, junction - case,

top

RthJC

K/W

Device on PCB,

6 cm

2 cooling area1)

RthJA

K/W

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

2) See Diagram 3 for more detailed information

3) See Diagram 13 for more detailed information

BSC019N04LS 数据表(PDF) 3 Page - Infineon Technologies AG

BSC019N04LS 数据表(HTML) 3 Page - Infineon Technologies AG

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

数据表下载