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MBRB2045CT 数据表(PDF) 4 Page - Sangdest Microelectronic (Nanjing) Co., Ltd

部件名 MBRB2045CT
功能描述  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
PDF  6 Pages
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制造商  SMC [Sangdest Microelectronic (Nanjing) Co., Ltd]
网页  http://www.smc-diodes.com/
标志 SMC - Sangdest Microelectronic (Nanjing) Co., Ltd

MBRB2045CT 数据表(HTML) 4 Page - Sangdest Microelectronic (Nanjing) Co., Ltd

  MBRB2045CT Datasheet HTML 1Page - Sangdest Microelectronic (Nanjing) Co., Ltd MBRB2045CT Datasheet HTML 2Page - Sangdest Microelectronic (Nanjing) Co., Ltd MBRB2045CT Datasheet HTML 3Page - Sangdest Microelectronic (Nanjing) Co., Ltd MBRB2045CT Datasheet HTML 4Page - Sangdest Microelectronic (Nanjing) Co., Ltd MBRB2045CT Datasheet HTML 5Page - Sangdest Microelectronic (Nanjing) Co., Ltd MBRB2045CT Datasheet HTML 6Page - Sangdest Microelectronic (Nanjing) Co., Ltd  
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SANGDEST
MICROELECTRONICS
Technical Data
Green Products
Data Sheet N0186, Rev. -
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
•
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
MBR2035/2045CT
MBRB2035/2045CT
MBR2035/2045CT-1
Electrical Characteristics:
Characteristics
Symbol
Condition
Max.
Units
VF1
@ 10A, Pulse, TJ = 25 °C
0.70
V
Max. Forward Voltage Drop
(per leg)*
VF2
@ 10A, Pulse, TJ = 125 °C
0.60
V
Max. Reverse Current (per
leg)*
IR1
@VR = rated VR
TJ = 25 °C
1.0
mA
IR2
@VR = rated VR
TJ = 125 °C
15
mA
Max. Junction Capacitance
(per leg)
CT
@VR = 5V, TC = 25 °C
fSIG = 1MHz
600
pF
Max. Voltage Rate of Change
dv/dt
-
10,000
V/
μs
* Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Symbol
Condition
Specification
Units
Max. Junction Temperature
TJ
-
-55 to +150
°C
Max. Storage Temperature
Tstg
-
-55 to +150
°C
Maximum Thermal
Resistance Junction to Case
RθJC
DC operation
2.0
°C/W
Approximate Weight
wt
-
2
g
Case Style
TO-220AB /D²PAK/TO-262



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