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LM26 数据表(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
部件名 LM26
功能描述  Adapter Interface Circuit
PDF  6 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

LM26 数据表(HTML) 3 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V
ADAPTER
−0.3V to 28V
V
PEAK SENSE,VDIRECTION SENSE,
V
BACKFEED,VDISCONNECT
−0.3V to V
ADAPTER
V
ADAPTER ENABLE,
V
MASTER POWER SOURCE
−0.3V to 5.5V
V
MPS DELAY
−0.3V to 2V
Storage Temperature
−40˚C to 125˚C
ESD Ratings
Human Body Model (Note 2)
Machine Model (Note 3)
2kV
200V
Operating Ratings (Note 1)
Supply Voltage (V
ADAPTER)
5Vto24V
Ambient Temp. Range
−20˚C to 70˚C
Junction Temp. Range
−20˚C to 85˚C
Electrical Characteristics
Limits with standard typeface apply for T
J = 25˚C, and limits in boldface type apply over the full temperature range (Note 4)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V
AE
Adapter Enable -
3V- or 5V-CMOS or TTL Logic Input
High
Low
2.0
0.8
V
V
AP, CP
Logic Output Voltage
Adapter present, Charger present
High
Low, I
SINK = 5µA
2.9
3.1
0.25
0.6
V
V
MPSI
Master Power Source
5V-CMOS Logic Input
High
Low
4.0
0.8
V
V
MPSO
Logic Output Voltage
Master Power Source
V
ADAPTER > 5.8V
High
Low
4.5
4.75
0.05
0.5
V
V
ADAPTER
Adapter Voltage for V
AP Low-to-High
Transition
11.7
12.0
12.3
V
Hysteresis
1.8
2.0
2.2
V
CHARGER
Adapter Voltage for V
CP
Low-to-High Transition
16.5
17.0
17.4
V
Hysteresis
0.08
0.10
0.12
∆V
BACKFEED
Current Sense Differential Voltage
Threshold for Driving Backfeed FET
Vadapter − Direction sense,
V
ADAPTER =5V
4
3
917
18
mV
∆V
DISCONNECT
Current Sense Differential Voltage
Threshold for Driving Disconnect FET
Vadapter − Peak sense,
V
ADAPTER = 24V
127
125
135
143
145
mV
V
BACKFEED,
FET Control Voltage
V
ADAPTER > 11V
High
V
ADAPTER -
0.5V
V
V
DISCONNECT
V
ADAPTER > 11V
Low
V
ADAPTER -
10V or
GND+0.5V,
whichever is
greater
t
DRIVE
Rise/Fall Time of FET Drive
(Note 5)
V
ADAPTER = 10V
C
Load = 3000pF
3
6
µS
I
Q
Quiescent Current
V
ADAPTER = 24V
2
10
mA
I
L,B,
I
L,D
Leakage Current into Backfeed or
Disconnect
V
ADAPTER =0V
V
BACKFEED,VDISCONNECT = 18V
1
15
µA
I
L,AE
Input Current into Adapter Enable
Input
V
AE = 3.3V,
Backfeed/Disconnect = 18V
50
µA
I
L, MPS
Input Current into MPS Input
V
MPS = 5.5V
175
µA
TC
DELAY
Delay Time Temperature Coefficient
4000
ppm/˚C
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics.
Note 2: The human body model is a 100pF capacitor discharged through a 1.5k
Ω resistor into each pin.
Note 3: The machine model is a 200pF capacitor discharged directly into each pin. All pins are rated for 200V except pins 4 and 5 which are rated for 100V.
Note 4: Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
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