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STTH1602C 数据表(PDF) 4 Page - STMicroelectronics |
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STTH1602C 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 7 page ![]() STTH1602C 4/7 0 10 20 30 40 50 60 70 80 10 100 1000 t(ns) rr dI /dt(A/µs) F T =25°C j T =125°C j I =8A F V =160V R Fig. 6: Reverse recovery time versus dIF/dt (typical values, per diode). 0 2 4 6 8 10 12 14 16 10 100 1000 I(A) RM dI /dt(A/µs) F T =25°C j T =125°C j I =8A F V =160V R Fig. 7: Peak reverse recovery current versus dIF/dt (typical values, per diode). 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 150 IRM Qrr T (°C) j Q; rr I [T ]/Q ;I [T =125°C] RM j rr RM j I =8A F V =160V R Fig. 8: Dynamic parameters versus junction temperature. 0 10 20 30 40 50 60 70 80 02468 10 12 14 16 18 20 S(Cu)(cm²) R (°C/W) th(j-a) Fig. 9: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, eCU: 35µm) for D 2PAK. 0 20 40 60 80 100 120 140 160 180 200 220 240 260 280 10 100 1000 Q (nC) rr dI /dt(A/µs) F I =8A F V =160V R T =125°C j T =25°C j Fig. 5: Reverse recovery charges versus dIF/dt (typical values, per diode). |
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