BCF030T

HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 300 µm)

The BeRex BCF030T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 300 micron gate

width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise

while providing high-gain and medium power from DC to 26.5 GHz frequency range. This product is well

suited for either wideband or narrow-band applications. The BCF030T is produced using state of the art

passivation for increased reliability.

Product Features

•

21.5 dBm Typical Output Power

•

13.5 dB Typical Power Gain @ 12 GHz

•

Low Phase Noise

•

0.3 X 300 Micron Recessed Gate

Applications

•

Commercial

•

Military / Hi-Rel

•

Test & Measurement

PARAMETER/TEST CONDITIONS

MINIMU

M

TYPICAL

MAXIMU

M

UNIT

60

90

120

mA

Gm

35

50

mS

Vp

-3.5

-2.0

-0.5

V

-15

-11

V

-10

-7

V

Thermal Resistance (Au-Sn Eutectic Attach)

120

° C/W

www.berex.com

BeRex, Inc. 3350 Scott Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595

January 2015

Specifications are subject to change without notice. ©BeRex 2015

Rev. 1.3