AT41586 datasheet(1/6 Pages) HP

部件名	AT41586

功能描述	Low Cost General Purpose Transistors

PDF	6 Pages

Scroll/Zoom	100%

制造商	HP [Agilent(Hewlett-Packard)]

网页	http://www.home.agilent.com

标志

1 / 6 page

Low Cost General Purpose

Transistors

Technical Data

Features

• Low Noise Figure

1.4 dB Typical at 1 GHz

1.7 dB Typical at 2 GHz

• High Associated Gain

17.0 dB Typical at 1 GHz

12.5 dB Typical at 2 GHz

• Low Cost Surface Mount

Package

• Tape and Reel Option

Available

AT-41586

Figure 1. AT-41586 Noise Figure and

Associated Gain vs. Frequency at

VCE = 8 V, IC = 10 mA.

FREQUENCY (GHz)

4.0

1.0

6

0

24

21

3

15

18

0.5

12

9

3.0

2.0

2

4

0

GA

O

NF

1

4

3

2

EMITTER

BASE

EMITTER

COLLECTOR

86 Plastic Package

Description

Hewlett-Packard’s AT-41586 is a

general purpose NPN bipolar

transistor that offers excellent

high frequency performance. The

AT-41586 is housed in a low cost

surface mount .085" diameter

plastic package. The 4 micron

emitter-to-emitter pitch enables

this transistor to be used in many

different functions. The 14 emitter

finger interdigitated geometry

yields an intermediate sized

transistor with impedances that

are easy to match for low noise

and moderate power applications.

Applications include use in

wireless systems as an LNA, gain

stage, buffer, oscillator, and

mixer. An optimum noise match

near 50

Ω in the 1 to 2 GHz

frequency range, makes this

device easy to use as a low noise

amplifier.

The AT-41586 bipolar transistor is

fabricated using Hewlett-Packard’s

10 GHz f

T Self-Aligned-Transistor

(SAT) process. The die is nitride

passivated for surface protection.

Excellent device uniformity,

performance and reliability are

produced by the use of ion-

implantation, self-alignment

techniques, and gold metalization

in the fabrication of this device.

Pin Connections

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