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HC125A 数据表(PDF) 2 Page - ON Semiconductor |
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HC125A 数据表(HTML) 2 Page - ON Semiconductor |
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2 / 7 page ![]() MC74HC125A, MC74HC126A http://onsemi.com 2 MAXIMUM RATINGS Symbol Parameter Value Unit VCC DC Supply Voltage (Referenced to GND) –0.5 to +7.0 V Vin DC Input Voltage (Referenced to GND) –0.5 to VCC + 0.5 V Vout DC Output Voltage (Referenced to GND) –0.5 to VCC + 0.5 V Iin DC Input Current, per Pin ±20 mA Iout DC Output Current, per Pin ±35 mA ICC DC Supply Current, VCC and GND Pins ±75 mA PD Power Dissipation in Still Air SOIC Package† TSSOP Package† 500 450 mW Tstg Storage Temperature –65 to +150 _C TL Lead Temperature, 1 mm from Case for 10 Seconds (SOIC or TSSOP Package) 260 _C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. †Derating: SOIC Package: –7 mW/ _C from 65_ to 125_C TSSOP Package: –6.1 mW/ _C from 65_ to 125_C RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit VCC DC Supply Voltage (Referenced to GND) 2.0 6.0 V Vin, Vout DC Input Voltage, Output Voltage (Referenced to GND) 0 VCC V TA Operating Temperature, All Package Types –55 +125 _C tr, tf Input Rise and Fall Time VCC = 2.0 V (Figure 1) VCC = 4.5 V VCC = 6.0 V 0 0 0 1000 500 400 ns Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance cir- cuit. For proper operation, Vin and Vout should be constrained to the range GND v (Vin or Vout) v VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. |
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