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DG2501 数据表(PDF) 3 Page - Vishay Siliconix

部件名 DG2501
功能描述  Low Leakage, Low Parasitic and Low Charge Injection, Quad SPST Analog Switches
PDF  9 Pages
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

DG2501 数据表(HTML) 3 Page - Vishay Siliconix

  DG2501 Datasheet HTML 1Page - Vishay Siliconix DG2501 Datasheet HTML 2Page - Vishay Siliconix DG2501 Datasheet HTML 3Page - Vishay Siliconix DG2501 Datasheet HTML 4Page - Vishay Siliconix DG2501 Datasheet HTML 5Page - Vishay Siliconix DG2501 Datasheet HTML 6Page - Vishay Siliconix DG2501 Datasheet HTML 7Page - Vishay Siliconix DG2501 Datasheet HTML 8Page - Vishay Siliconix DG2501 Datasheet HTML 9Page - Vishay Siliconix  
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DG2501, DG2502, DG2503
www.vishay.com
Vishay Siliconix
S14-1059-Rev. A, 19-May-14
3
Document Number: 62962
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL CHARACTERISTICS 3 V Supply
PARAMETER
SYMBOL
TEST CONDITION
UNLESS OTHERWISE SPECIFIED,
V+ = 3 V
VINH = 1.4 V, VINL = 0.8 V a
TEMP. b
TYP. c
-40 °C to 85 °C
UNIT
MIN. d
MAX. d
Analog Switch
Analog Signal Range e
VANALOG
Full
-
0
3
V
Drain-Source On
Resistance
RDS(on)
VS = 1.5 V, IS = -1 mA
Room
133
-
200
Ω
Full
-
-
250
On-Resistance Matching
ΔRon
Room
0.83
-
10
Full
-
-
13
Switch Off Leakage
Current
IS/ID(off)
V+ = 3.3 V,
VS = 0.3 V/3 V, VD = 3 V/0.3 V
Room
± 0.016
-0.4
+0.4
nA
Full
-
-1
+1
Channel On Leakage
Current
ID(on)
V+ = 3.3 V,
VD = 0.3 V/3 V
Room
± 0.009
-0.4
+0.4
Full
-
-1
+1
Digital Control
Input, High Voltage
VINH
Full
-
1.4
-
V
Input, Low Voltage
VINL
Full
-
-
0.4
Input Leakage
IIN
VIN = VGND or V+
Room
± 0.001
-
-
μA
Full
-
-0.1
+0.1
Digital Input Capacitance e
CIN
f = 1 MHz
Room
2
-
-
pF
Dynamic Characteristics
Break-Before Make Time
tBBM
DG2503 only, VS1 = VS2 = 1.5 V,
RL = 300
Ω CL = 35 pF
Room
47
10
-
ns
Full
-
10
-
Turn-On Time
tON
VS = 1.5 V, RL = 300
Ω, CL = 35 pF
Room
175
-
220
Full
-
-
250
Turn-Off Time
tOFF
Room
77
-
100
Full
-
-
120
Charge Injection e
QINJ
CL = 1 nF, RGEN = 0
Ω, VS = 1.5 V
Room
-0.7
-
-
pC
Off Isolation e
OIRR
RL = 50
Ω, CL = 5 pF, f = 1MHz
Room
-83
-
-
dB
Cross Talk e
X Talk
Room
-85
-
-
3 dB Bandwidth e
BW
RL = 50
Ω, CL = 5 pF
Room
510
-
-
MHz
Source Off Capacitance e
CS(off)
f = 1 MHz, VS = 1.5 V
Room
2.9
-
-
pF
Drain Off Capacitance e
CD(off)
Room
2.8
-
-
Drain On Capacitance e
CD(on)
Room
7.8
-
-
Power Requirements
Power Supply Current
I+
Digital Input 0 or V+
Room
0.001
-
-
μA
Full
-
-
1



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