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STTH3R02AFY 数据表(PDF) 3 Page - STMicroelectronics |
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STTH3R02AFY 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() DocID027545 Rev 1 3/8 STTH3R02-Y Characteristics 8 Table 5. Dynamic electrical characteristics Symbol Parameter Tests conditions Min. Typ. Max. Unit trr Reverse recovery time Tj = 25 °C IF = 1 A, dIF/dt = -100 A/µs, VR = 30 V 16 21 ns IF = 1 A, dIF/dt = 50 A/µs, VR = 30 V 23 Tj = 125 °C IF = 3 A, dIF/dt = 200 A/µs, VR = 160 V 24 QRR Reverse recovery charge Tj = 125 °C IF = 3 A, dIF/dt = -200 A/µs, VR = 160 V 50 nC IRM Reverse recovery current 3.5 A Figure 1. Average forward power dissipation versus average forward current Figure 2. Forward voltage drop versus forward current (typical values) Figure 3. Forward voltage drop versus forward current (maximum values) Figure 4. Relative variation of thermal impedance junction to lead versus pulse duration |
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