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60mA 8.0Kv 150nS--High voltage silicon rectifier diode

GETE ELECTRONIC CO.,LTD

Http://www.getedz.com

GETAI ELECTRONIC DEVICE CO.,LTD

TEL:0086-20-8184 9628

FAX:0086-20-8184 9638

2016 1 / 1

MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)

Items

Symbols

Condition

Data Value Units

Repetitive Peak Renerse Voltage

Ta=25°C;

8.0

kV

Average Output Current

Ta=25°C;Resistive Load

60

mA

Suege Current

Ta=25°C; 1/2 Sine(60Hz)

10

A

Junction Temperature

-40~+125

°C

Allowable Operation Case Temperature

Tc

125

°C

Storage Temperature

-40~+125

°C

ELECTRICAL CHARACTERISTICS: Ta=25°C (Unless otherwise specified)

Items

Symbols

Condition

Data value Units

Maximum Forward Voltage Drop

16

V

Maximum Reverse Current

2.0

uA

50

uA

Maximum Reverse Recovery Time

150

nS

Junction Capacitance

4.1

pF

HVGT high voltage silicon rectifier diodes is

made of high quality glass passivated chip and high

reliability epoxy resin sealing structure, and

through professional testing equipment inspection

qualified after to customers.

SHAPE DISPLAY:

SIZE: (Unit:mm)

HVGT NAME: DO-415

FEATURES:

1. High reliability design.

2. High voltage design.

3. High frequency .

4. Conform to RoHS.

5. Epoxy resin molded in vacuumHave

anticorrosion in the surface.

APPLICATIONS:

1. High voltage multiplier circuit

2. Electrostatic generator circuit .

3. General purpose high voltage rectifier.

4. Other.

MECHANICAL DATA:

1. Case: epoxy resin molding.

2. Terminal: welding axis.

3. Net weight: 0.65 grams (approx).