GDZ3V9LP3 - GDZ8V2LP3

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

250

mW

500

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Type

Number

Marking

Code

Zener Voltage Range

(Note 6)

Maximum

Reverse

Current

(Note 6)

Nom (V)

Min (V)

Max (V)

mA

µA

V

GDZ3V9LP3

KJ

3.9

3.740

4.160

5

5

1.0

GDZ4V7LP3

KL

4.7

4.420

4.900

5

2.0

1.0

GDZ5V1LP3

KM

5.1

4.840

5.370

5

0.2

2.0

GDZ5V6LP3

KN

5.6

5.310

5.920

5

1.0

2.5

GDZ6V0LP3

KW

6.0

5.676

6.324

5

1.0

2.8

GDZ6V2LP3

KO

6.2

5.860

6.530

5

1.0

3.0

GDZ6V8LP3

KT

6.8

6.470

7.140

5

0.5

3.5

GDZ7V5LP3

KQ

7.5

7.060

7.840

5

0.5

4.0

GDZ8V2LP3

KX

8.2

7.760

8.640

5

0.5

5.0

Notes:

5. Device mounted on FR-4 PCB with minimum recommended pad layout, as shown in Diodes Incorporated’s Suggested Pad Layout document, which can

be found on our website at http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

0

0.05

0.10

0.15

0.20

0.25

0.30

0

25

50

75

100

125

150

T , AMBIENT TEMPERATURE (°C)

Figure 1 Power Derating Curve

A

Note 5

0.2

0.4

0.6

0.8

1.0

1.2

0.01

0.1

1

10

100

1,000

V , INSTANTANEOUS FORWARD VOLTAGE (V)

Figure 2 Typical Forward Characteristics

F

T = 25°C

A

T = -55°C

A

T = 50°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

GDZ3V9LP3 - GDZ8V2LP3

Document number: DS35065 Rev. 16 - 2

2 of 4

www.diodes.com

August 2014

© Diodes Incorporated