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STD8N60DM2 数据表(PDF) 1 Page - STMicroelectronics |
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STD8N60DM2 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 15 page ![]() November 2016 DocID027865 Rev 2 1/15 This is information on a product in full production. www.st.com STD8N60DM2 N- channel 600 V, 550 mΩ typ., 8 A MDmesh™ DM2 Power MOSFET in a DPAK package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STD8N60DM2 600 V 600 mΩ 8 A 85 W Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STD8N60DM2 8N60DM2 DPAK Tape and reel |
类似零件编号 - STD8N60DM2 |
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类似说明 - STD8N60DM2 |
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