STL33N60DM2

Electrical ratings

DocID026781 Rev 2

3/15

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

Gate-source voltage

± 25

V

ID

(1)

21

A

ID

(1)

15

A

IDM

(1),(2)

Drain current (pulsed)

84

A

(1)

150

W

Avalanche current, repetitive or not-repetitive (pulse width limited by

4.5

A

Single pulse avalanche energy

570

mJ

dv/dt

(3)

Peak diode recovery voltage slope

50

V/ns

dv/dt

(4)

MOSFET dv/dt ruggedness

50

V/ns

Storage temperature range

- 55 to 150

°C

Operating junction temperature range

Notes:

(1)

(2)

Pulse width limited by safe operating area.

(3)

(4)

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Thermal resistance junction-case max

0.83

°C/W

(1)

Thermal resistance junction-ambient max

45

°C/W

Notes:

(1)

When mounted on FR-4 board of inch², 2oz Cu.