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F206NIA200SA-M105F 数据表(PDF) 13 Page - Vincotech |
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F206NIA200SA-M105F 数据表(HTML) 13 Page - Vincotech |
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13 / 24 page ![]() F206NIA200SA-M105F preliminary datasheet Figure 5 IGBT Figure 6 IGBT Typical switching energy losses Typical switching energy losses as a function of collector current as a function of gate resistor E = f(IC) E = f(RG) With an inductive load at With an inductive load at Tj = 25/125 °C Tj = 25/125 °C VCE = 350 V VCE = 350 V VGE = ±15 V VGE = ±15 V Rgon = 4 Ω IC = 201 A Rgoff = 4 Ω Figure 7 IGBT Figure 8 IGBT Typical reverse recovery energy loss Typical reverse recovery energy loss as a function of collector current as a function of gate resistor Erec = f(Ic)Erec = f(RG) With an inductive load at With an inductive load at Tj = 25/125 °C Tj = 25/125 °C VCE = 350 V VCE = 350 V VGE = ±15 V VGE = ±15 V Rgon = 4 Ω IC = 201 A Boost Erec High T Erec Low T 0 1,5 3 4,5 6 7,5 0 100 200 300 400 I C (A) Erec High T Erec Low T 0 1 2 3 4 5 6 0 4 8 12 16 20 R G ( Ω ) Eoff High T Eon High T Eon Low T Eoff Low T 0 4 8 12 16 20 0 100 200 300 400 I C (A) Eoff High T Eon High T Eon Low T Eoff Low T 0 4 8 12 16 20 0 4 8 12 16 20 R G( Ω ) 13 Revision: 4 Copyright by Vincotech |
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