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TYN610F 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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TYN610F 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Thyristors TYN610F DESCRIPTION · In a full package ,plastic envelope · High surge capability · High state current · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · The TYN610F is designed for power supplies up to 400Hz on resistive or inductive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive peak reverse voltage 600 V IT(RMS) RMS On-state current Tc=100℃ 10 A IT(AV) On-state current Tc=100℃ 6.4 A ITSM Surge non-repetitive on-state current Tp=10ms 100 A di/dt Repetitive rate of rise of on-state current after triggering Tj=125℃ 50 A/us I2t I2t for fusing t = 10 ms 50 A2S Tj Operating Junction temperature 125 ℃ Tstg Storage temperature -40 ~+150 ℃ |
类似零件编号 - TYN610F |
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类似说明 - TYN610F |
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