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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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STM8AL3L8x 数据表(PDF) 77 Page - STMicroelectronics |
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STM8AL3L8x 数据表(HTML) 77 Page - STMicroelectronics |
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77 / 131 page  DocID027179 Rev 6 77/131 STM8AL318x STM8AL3L8x Electrical parameters 117 Figure 18. Typical IDD(LPW) vs. VDD (LSI clock source), all peripherals OFF(1) 1. Typical current consumption measured with code executed from RAM. Table 24. Total current consumption in low-power wait mode at VDD = 1.65 V to 3.6 V Symbol Parameter Conditions(1) Typ. Max. Unit IDD(LPW) Supply current in low-power wait mode LSI RC osc. (at 38 kHz) all peripherals OFF TA = -40 °C to 25 °C 3.00 3.30(2) μA TA = 85 °C 4.40 9.00(3) TA = 125 °C 11.00 18.00(3) LSE external clock(4) (32.768 kHz) TA = -40 °C to 25 °C 2.35 2.70(2) TA = 85 °C 3.10 3.70(2) TA = 125 °C 12.0 14.0(2) 1. No floating I/Os. 2. Guaranteed by characterization results. 3. Tested at 85°C for temperature range A or 125°C for temperature range C. 4. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the LSE consumption (IDD LSE) must be added. Refer to Table 33. |
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