STM32F446RC datasheet(157/202 Pages) STMICROELECTRONICS

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STM32F446xC/E

Electrical characteristics

175

Table 90. Asynchronous multiplexed PSRAM/NOR read timings(1)(2)

1. CL = 30 pF.

2. Guaranteed based on test during characterization.

Symbol

Parameter

Min

Max

Unit

tw(NE)

FMC_NE low time

3THCLK – 2

3THCLK+0.5

tv(NOE_NE)

FMC_NEx low to FMC_NOE low

2THCLK – 0.5

2THCLK

ttw(NOE)

FMC_NOE low time

THCLK – 1

THCLK + 0.5

th(NE_NOE)

FMC_NOE high to FMC_NE high hold time

tv(A_NE)

FMC_NEx low to FMC_A valid

tv(NADV_NE)

FMC_NEx low to FMC_NADV low

tw(NADV)

FMC_NADV low time

THCLK – 0.5

THCLK + 0.5

th(AD_NADV)

FMC_AD(address) valid hold time after

FMC_NADV high)

th(A_NOE)

Address hold time after FMC_NOE high

THCLK – 0.5

th(BL_NOE)

FMC_BL time after FMC_NOE high

tv(BL_NE)

FMC_NEx low to FMC_BL valid

tsu(Data_NE)

Data to FMC_NEx high setup time

THCLK + 1.5

tsu(Data_NOE)

Data to FMC_NOE high setup time

THCLK + 1

th(Data_NE)

Data hold time after FMC_NEx high

th(Data_NOE)

Data hold time after FMC_NOE high

Table 91. Asynchronous multiplexed PSRAM/NOR read-NWAIT timings(1)(2)

1. CL = 30 pF.

2. Guaranteed based on test during characterization.

Symbol

Parameter

Min

Max

Unit

tw(NE)

FMC_NE low time

8THCLK - 1

8THCLK + 2

tw(NOE)

FMC_NWE low time

5THCLK – 1

5THCLK + 1

tsu(NWAIT_NE)

FMC_NWAIT valid before FMC_NEx high 5THCLK + 1.5

th(NE_NWAIT)

FMC_NEx hold time after FMC_NWAIT

invalid

4THCLK + 1

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