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STM32F479AI 数据表(PDF) 106 Page - STMicroelectronics |
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STM32F479AI 数据表(HTML) 106 Page - STMicroelectronics |
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106 / 217 page ![]() Electrical characteristics STM32F479xx 106/217 DocID028010 Rev 3 Figure 27. Typical VBAT current consumption (RTC ON / backup SRAM ON and LSE in Low drive mode) Table 31. Typical and maximum current consumption in VBAT mode Symbol Parameter Conditions(1) Typ Max(2) Unit TA = 25 °C TA = 25 °C TA = 85 °C TA = 105 °C VBAT = 1.7 V VBAT= 2.4 V VBAT = 3.3 V VBAT = 3.3 V IDD_VBAT Backup domain supply current Backup SRAM ON, RTC ON and LSE oscillator in Low Power mode 1.431 1.577 1.825 1.9 12.0 24.0 µA Backup SRAM OFF, RTC ON and LSE oscillator in Low Power mode 0.720 0.849 1.060 1.1 7.0 13.9 Backup SRAM ON, RTC ON and LSE oscillator in High Drive mode 2.212 2.368 2.630 2.80 17.3 34.6 Backup SRAM OFF, RTC ON and LSE oscillator in High Drive mode 1.499 1.637 1.862 2.0 12.3 24.5 Backup SRAM ON, RTC and LSE OFF 0.710 0.720 0.760 0.8(3) 5.0 10.0(3) Backup SRAM OFF, RTC and LSE OFF 0.018 0.020 0.024 0.2(3) 2.0 4.0(3) 1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values. 2. Based on characterization, tested in production. 3. Based on test during characterization. 0 1 2 3 4 5 6 0 2040 6080 100 Temperature (°C) 1.65V 1.70V 1.80V 2.00V 2.40V 2.70V 3.00V 3.30V 3.60V |
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