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STM32F479AI 数据表(PDF) 132 Page - STMicroelectronics

部件名 STM32F479AI
功能描述  ARMCortex-M4 32b MCUFPU, 225DMIPS, up to 2MB Flash/3844KB RAM, USB OTG HS/FS, Ethernet, FMC, dual Quad-SPI, Crypto, Graphical accelerator, Camera IF, LCD-TFT & MIPI DSI
PDF  217 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F479AI 数据表(HTML) 132 Page - STMicroelectronics

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Electrical characteristics
STM32F479xx
132/217
DocID028010 Rev 3
Static latchup
Two complementary static tests are required on six parts to assess the latchup
performance:
A supply overvoltage is applied to each power supply pin
A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78A IC latchup standard.
5.3.19
I/O current injection characteristics
As a general rule, current injection to the I/O pins, due to external voltage below VSS or
above VDD (for standard, 3 V-capable I/O pins) should be avoided during normal product
operation. However, in order to give an indication of the robustness of the microcontroller in
cases when abnormal injection accidentally happens, susceptibility tests are performed on a
sample basis during device characterization.
Functional susceptibility to I/O current injection
While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error above a certain limit (>5
LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out of –
5 µA/+0 µA range), or other functional failure (for example reset, oscillator frequency
deviation).
Negative induced leakage current is caused by negative injection and positive induced
leakage current by positive injection.
The test results are given in Table 57.
Table 55. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class
Maximum
value(1)
Unit
VESD(HBM)
Electrostatic discharge
voltage
(human body model)
TA = +25 °C
conforming to ANSI/ESDA/JEDEC JS-001
2
2000
V
VESD(CDM)
Electrostatic discharge
voltage
(charge device model)
TA = +25 °C conforming to ANSI/ESD S5.3.1,
LQFP176, LQFP208, UFBGA169, UFBGA176,
TFBGA216 and WLCSP148 packages
C3
250
1. Guaranteed based on test during characterization.
Table 56. Electrical sensitivities(1)
Symbol
Parameter
Conditions
Class
LU
Static latch-up class
TA = +105 °C conforming to JESD78A
II level A
1. MSV on PA4 and PA5 is 5 V, versus 5.4 V on all IOs.



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