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TSZ121 数据表(PDF) 7 Page - STMicroelectronics |
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TSZ121 数据表(HTML) 7 Page - STMicroelectronics |
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7 / 38 page ![]() TSZ121, TSZ122, TSZ124 Electrical characteristics DocID023563 Rev 5 7/38 Table 4: Electrical characteristics at VCC+ = 3.3 V with VCC- = 0 V, Vicm = VCC/2, T = 25 ° C, and RL = 10 kΩ connected to VCC/2 (unless otherwise specified) Symbol Parameter Conditions Min. Typ. Max. Unit DC performance Vio Input offset voltage T = 25 °C 1 5 μV -40 °C < T < 125 °C 8 ΔVio/ΔT Input offset voltage drift (1) -40 °C < T < 125 °C 10 30 nV/°C Iib Input bias current (Vout = VCC/2) T = 25 °C 60 200 (2) pA -40 °C < T < 125 °C 300 (2) Iio Input offset current (Vout = VCC/2) T = 25 °C 120 400 (2) -40 °C < T < 125 °C 600 (2) CMR Common mode rejection ratio, 20 log (ΔVicm/ΔVio), Vic = 0 V to VCC, Vout = VCC/2, RL > 1 MΩ T = 25 °C 115 128 dB -40 °C < T < 125 °C 115 Avd Large signal voltage gain, Vout = 0.5 V to (VCC - 0.5 V) T = 25 °C 118 135 -40 °C < T < 125 °C 110 VOH High-level output voltage T = 25 °C 30 mV -40 °C < T < 125 °C 70 VOL Low-level output voltage T = 25 °C 30 -40 °C < T < 125 °C 70 Iout Isink (Vout = VCC) T = 25 °C 15 18 mA -40 °C < T < 125 °C 12 Isource (Vout = 0 V) T = 25 °C 14 16 -40 °C < T < 125 °C 10 ICC Supply current (per amplifier, Vout = VCC/2, RL > 1 MΩ) T = 25 °C 29 40 μA -40 °C < T < 125 °C 40 AC performance GBP Gain bandwidth product RL = 10 kΩ, CL = 100 pF 400 kHz Fu Unity gain frequency 300 ɸm Phase margin 56 Degrees Gm Gain margin 19 dB SR Slew rate (3) 0.19 V/μs ts Setting time To 0.1 %, Vin = 1 Vp-p, RL = 10 kΩ, CL = 100 pF 50 μs en Equivalent input noise voltage f = 1 kHz 40 nV/√Hz f = 10 kHz 40 Cs Channel separation f = 100 Hz 120 dB tinit Initialization time T = 25 °C 50 μs -40 °C < T < 125 °C 100 |
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