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LM3301 数据表(PDF) 2 Page - National Semiconductor (TI) |
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LM3301 数据表(HTML) 2 Page - National Semiconductor (TI) |
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2 / 20 page ![]() Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications LM2900LM3900 LM3301 Supply Voltage 32 VDC 28 VDC g 16 VDC g 14 VDC Power Dissipation (TA e 25 C) (Note 1) Molded DIP 1080 mW 1080 mW SO Package 765 mW Input Currents IIN a or IIN b 20 mADC 20 mADC Output Short-Circuit DurationOne Amplifier Continuous Continuous TA e 25 C (See Application Hints) Operating Temperature Range b 40 Cto a85 C LM2900 b 40 Cto a85 C LM3900 0 Cto a70 C Storage Temperature Range b 65 Cto a150 C b 65 Cto a150 C Lead Temperature (Soldering 10 sec) 260 C 260 C Soldering Information Dual-In-Line Package Soldering (10 sec) 260 C 260 C Small Outline Package Vapor Phase (60 sec) 215 C 215 C Infrared (15 sec) 220 C 220 C See AN-450 ‘‘Surface Mounting Methods and Their Effect on Product Reliability’’ for other methods of soldering surface mount devices ESD tolerance (Note 7) 2000V 2000V Electrical Characteristics TA e 25 C Va e 15 VDC unless otherwise stated Parameter Conditions LM2900 LM3900 LM3301 Units Min Typ Max Min Typ Max Min Typ Max Open Voltage Gain Over Temp VmV Loop Voltage Gain D VO e 10 VDC 12 28 12 28 12 28 Input Resistance Inverting Input 111 MX Output Resistance 8 8 9 kX Unity Gain Bandwidth Inverting Input 25 25 25 MHz Input Bias Current Inverting Input V a e 5VDC 30 200 30 200 30 300 nA Inverting Input Slew Rate Positive Output Swing 05 05 05 V ms Negative Output Swing 20 20 20 Supply Current RL e % On All Amplifiers 62 10 62 10 62 10 mADC Output VOUT High RL e 2k IIN b e 0 135 135 135 Voltage V a e 150 VDC IINa e 0 Swing VOUT Low IIN b e 10 mA 009 02 009 02 009 02 IIN a e 0VDC VOUT High V a e Absolute IIN b e 0 Maximum Ratings IIN a e 0 295 295 260 RL e % Output Source 6 18 6 10 5 18 Current Sink (Note 2) 05 13 05 13 05 13 mADC Capability ISINK VOL e 1V IIN b e 5 mA5 5 5 2 |
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