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STGP6M65DF2 数据表(PDF) 16 Page - STMicroelectronics |
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STGP6M65DF2 数据表(HTML) 16 Page - STMicroelectronics |
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16 / 17 page ![]() Revision history STGP6M65DF2 16/17 DocID028696 Rev 3 5 Revision history Table 9: Document revision history Date Revision Changes 30-Nov-2015 1 First release. 13-Jan-2016 2 Modified: Table 4: "Static characteristics", Table 5: "Dynamic characteristics", Table 6: "IGBT switching characteristics (inductive load)", and Table 7: "Diode switching characteristics (inductive load)" Added: Section 2.1: "Electrical characteristics (curves)" Minor text changes. 03-Aug-2016 3 Updated Table 2: "Absolute maximum ratings", Table 4: "Static characteristics", Table 6: "IGBT switching characteristics (inductive load)", Table 7: "Diode switching characteristics (inductive load)". Updated Figure 9: "Forward bias safe operating area", Figure 12: "Normalized VGE(th) vs. junction temperature", Figure 20: "Short- circuit time and current vs. VGE", Figure 23: "Reverse recovery current vs. diode current slope". Changed Figure 25: "Reverse recovery charge vs. diode current slope" and Figure 26: "Reverse recovery energy vs. diode current slope". |
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