STP11N60DM2 datasheet(1/12 Pages) STMICROELECTRONICS

部件名	STP11N60DM2

功能描述	N-channel 600 V, 0.370 (ohm) typ., 10 A MDmesh DM2 Power MOSFET in a TO-220 package

PDF	12 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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1 / 12 page

June 2016

DocID029388 Rev 1

1/12

This is information on a product in full production.

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STP11N60DM2

N-channel 600 V, 0.370

Ω typ., 10 A MDmesh™ DM2

Power MOSFET in a TO-220 package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS @

TJmax.

RDS(on)

max.

ID

PTOT

STP11N60DM2

650 V

0.420 Ω

10 A

110 W



Fast-recovery body diode



Extremely low gate charge and input

capacitance



Low on-resistance



100% avalanche tested



Extremely high dv/dt ruggedness



Zener-protected

Applications



Switching applications

Description

This high voltage N-channel Power MOSFET is

part

of the MDmesh™ DM2 fast recovery diode

series. It offers very low recovery charge (Qrr)

and time (trr) combined with low RDS(on), rendering

it suitable for the most demanding high efficiency

converters and ideal for bridge topologies and

ZVS phase-shift converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STP11N60DM2

11N60DM2

TO-220

Tube

类似零件编号 - STP11N60DM2

制造商	部件名	数据表	功能描述
VBsemi Electronics Co.,...	STP11N60	1Mb / 8P	N-Channel 650 V (D-S) MOSFET

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类似说明 - STP11N60DM2

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	STP13N60DM2	458Kb / 13P	N-channel 600 V, 0.310 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a TO-220 package November 2018
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