STPSC10H12D datasheet(2/8 Pages) STMICROELECTRONICS

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Characteristics

STPSC10H12

2/8

DocID029139 Rev 1

Characteristics

Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage (Tj = -40 °C to +175 °C)

1200

IF(RMS)

Forward rms current

IF(AV)

Average forward current

TC = 155 °C, DC current

IFRM

Repetitive peak forward

current

TC = 155 °C, Tj

= 175 °C, δ = 0.1

IFSM

Surge non repetitive

forward current

tp = 10 ms sinusoidal

TC = 25 °C

TC = 150 °C

tp = 10 µs square

TC = 25 °C

420

Tstg

Storage temperature range

-65 to + 175

°C

Operating junction temperature range

-40 to + 175

°C

Table 3: Thermal parameters

Symbol

Parameter

Typ.

Max.

Unit

Rth(j-c)

Junction to case

0.65

0.9

°C/W

Table 4: Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

µA

Tj = 150 °C

400

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 10 A

1.35

1.50

Tj = 150 °C

1.75

2.25

Notes:

(1)Pulse test: tp = 10 ms, δ < 2%

(2)Pulse test: tp = 500 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 1.03 x IF(AV) + 0.122 IF2(RMS)

Table 5: Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

QCj(1)

Total capacitive charge

VR =800 V

Total capacitance

VR = 0 V, Tc = 25 °C, F = 1 MHz

725

VR = 300 V, Tc = 25 °C, F = 1 MHz

Notes:

(1)Most accurate value for the capacitive charge:

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