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TLE7183F 数据表(PDF) 9 Page - Infineon Technologies AG |
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TLE7183F 数据表(HTML) 9 Page - Infineon Technologies AG |
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9 / 28 page ![]() Data Sheet 9 2.2, 2016-01-27 TLE7183F General Product Characteristics Attention: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Attention: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. 4.2 Functional Range 4.1.28 Peak reflow soldering temperature2) Tref –260 °C– Thermal Resistance 4.1.29 Junction to case RthjC –5 K/W – Power Dissipation 4.1.30 Power Dissipation (DC) @ TCASE=125°C Ptot –2 W – ESD Susceptibility 4.1.31 ESD Resistivity3) VESD –2 kV 4.1.32 ESD Resistivity (charge device model)4) VESD –750 V 1) Not subject to production test, specified by design. 2) Reflow profile IPC/JEDEC J-STD-020C 3) ESD susceptibility HBM according to EIA/JESD 22-A 114B 4) ESD susceptibility CDM according to EIA/JESD 22-C 101 Pos. Parameter Symbol Limit Values Unit Conditions Min. Max. 4.2.1 Supply voltage1)2) VS 5.5 5.5 20 28 VDC t<1s 4.2.2 Duty cycle3) D0 100 % – 4.2.3 PWM frequency FPWM 0 25 kHz Total gate charge 400nC 4.2.4 Quiescent current4) IQ –30 µA VS,VDH<20 V 4.2.5 Quiescent current into VDH IQ_VDH –30 µA VDH<20V; VS pin open 4.2.6 Supply current at Vs IVs – – 175 175 110 110 mA FPWM=25kHz QG=250nC: VS = 5.5V VS = 14V VS = 17V VS = 20V 4.2.7 Supply current at Vs(device disabled by ENA) IVs(o) –60 50 mA Vs=5.5V..17V Vs=17V..20V 4.2.8 Currrent into VDH (device not in sleep mode) IVDH 1.5 mA VVDH=5.5..20V INH=high Absolute Maximum Ratings (cont’d)1) 40 °C ≤ T j ≤ 150 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Conditions Min. Max. |
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