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AS58C1001 数据表(PDF) 1 Page - Micross Components

部件名 AS58C1001
功能描述  Low power dissipation, active current
PDF  20 Pages
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制造商  MICROSS [Micross Components]
网页  http://www.micross.com
标志 MICROSS - Micross Components

AS58C1001 数据表(HTML) 1 Page - Micross Components

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EEPROM
AS58C1001
AS58C1001
Rev. 5.9 11/10
Micross Components reserves the right to change products or specifications without notice.
1
For more products and information
please visit our web site at
www.micross.com
128K x 8 EEPROM
Radiation Tolerant
AVAILABLE AS MILITARY
SPECIFICATIONS
SMD 5962-38267
MIL-PRF-38535
FEATURES
High speed: 150, 200, and 250ns
Data Retention: 10 Years
Low power dissipation, active current (20mW/MHz
(TYP)),
standby current (100
μW(MAX))
Single +5V (+10%) power supply
Data Polling and Ready/Busy Signals
Erase/Write Endurance (10,000 cycles in a page mode)
Software Data protection Algorithm
Data Protection Circuitry during power on/off
Hardware Data Protection with RES pin
Automatic Programming:
Automatic Page Write: 10ms (MAX)
128 Byte page size
OPTIONS
MARKINGS
Timing
150ns access
-15
200ns access
-20
250ns access
-25
Packages
Ceramic Flat Pack
F
No. 306
Radiation Shielded Ceramic FP* SF
No. 305
Ceramic SOJ
DCJ
No. 508
Operating Temperature Ranges
-Military (-55oC to +125oC)
XT
-Industrial (-40oC to +85oC)
IT
-Full Military Processing (-55oC to +125oC)
883C
*NOTE: Package lid is connected to ground (Vss). 2-sided shielding
provided via a Tungsten lid and a Tungsten slug on the underside of
package. 6.5X typ. TID boost due to shielding. (Geostationary orbit) Proven
typ. total dose 40K to 100K RADS. Contact factory for more information.
Micross can perform TID lot testing.
GENERAL DESCRIPTION
The AS58C1001 is a 1 Megabit CMOS Electrically Erasable Pro-
grammable Read Only Memory (EEPROM) organized as 131, 072 x
8 bits. The AS58C1001 is capable or in system electrical Byte and
Page reprogrammability.
The AS58C1001 achieves high speed access, low power consump-
tion, and a high level of reliability by employing advanced MNOS
memory technology and CMOS process and circuitry technology and
CMOS process and circuitry technology.
This device has a 128-Byte Page Programming function to make
its erase and write operations faster. The AS58C1001 features Data
Polling and a Ready/Busy signal to indicate completion of erase and
programming operations.
This EEPROM provides several levels of data protection.
Hard-
ware data protection is provided with the RES pin, in addition to noise
protection on the WE signal and write inhibit during power on and
off. Software data protection is implemented using JEDEC Optional
Standard algorithm.
The AS58C1001 is designed for high reliability in the most
de-
manding applications. Data retention is specified for 10 years and
erase/write endurance is guaranteed to a minimum of 10,000 cycles
in the Page Mode.
PIN ASSIGNMENT
(Top View)
32-Pin CFP (F & SF), 32-Pin CSOJ (DCJ)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
RDY/BUSY\
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O 0
I/O 1
I/O 2
Vss
Vcc
A15
RES\
WE\
A13
A8
A9
A11
OE\
A10
CE\
I/O 7
I/O 6
I/O 5
I/O 4
I/O 3


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