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2SD1142 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1142 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2SD1142 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0; L= 35mH 600 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.6A 4.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.6A 1.5 V ICES Collector Cutoff Current VCB= 1500V; VEB= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 44 133 mA hFE -1 DC Current Gain IC= 0.5A; VCE= 10V 12 hFE -2 DC Current Gain IC= 2A; VCE= 10V 5 18 Switching Times tstg Storage Time IC = 2.5A,IB1 = IB2= 0.6A 10 μ s tf Fall Time 1.0 μ s |
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