Absolute Maximum Ratings

If MilitaryAerospace specified devices are required

please contact the National Semiconductor Sales

OfficeDistributors for availability and specifications

LM3146

Units

Power Dissipation Each transistor

300

mW

Derate at 667 mW C

Power Dissipation Total Package

500

mW

Derate at 667 mW C

30

V

40

V

Collector to Substrate Voltage

40

V

(Note 2)

5

V

50

mA

Operating Temperature Range

b

C

Storage Temperature Range

b

C

Soldering Information

Dual-In-Line Package

Soldering (10 seconds)

260 C

Small Outline Package

Vapor Phase (60 seconds)

215 C

Infrared (15 seconds)

220 C

See AN-450 ‘‘Surface Mounting Methods and Their Effect

on Product Reliability’’ for other methods of soldering sur-

face mount devices

Symbol

Parameter

Conditions

Limits

Units

Min

Typ

Max

Collector to Base Breakdown Voltage

72

V

Collector to Emitter Breakdown Voltage

56

V

Collector to Substrate Breakdown

40

72

V

Voltage

Emitter to Base Breakdown Voltage

7

V

(Note 2)

Collector Cutoff Current

0002

100

nA

Collector Cutoff Current

(Note 3)

5

m

A

Static Forward Current Transfer

85

Ratio (Static Beta)

30

100

90

Input Offset Current for Matched

03

2

m

A

Pair Q1 and Q2

Base to Emitter Voltage

063

073

083

V

Magnitude of Input Offset Voltage

048

5

mV

for Differential Pair

D

Temperature Coefficient of Base

b

19

mV C

to Emitter Voltage

Collector to Emitter Saturation

033

V

Voltage

D

Temperature Coefficient of Input

11

m

V C

Offset Voltage

Note 1

The collector of each transistor is isolated from the substrate by an integral diode The substrate must be connected to a voltage which is more negative

than any collector voltage in order to maintain isolation between transistors and provide normal transistor action To avoid undesired coupling between transistors

the substrate terminal should be maintained at either dc or signal (ac) ground A suitable bypass capacitor can be used to establish a signal ground

Note 2

Note 3

See curve

2