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ZHT2431C02 数据表(PDF) 2 Page - Zetex Semiconductors

部件名 ZHT2431C02
功能描述  HIGH TEMPERATURE ADJUSTABLE PRECISION ZENER SHUNT REGULATOR
PDF  6 Pages
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制造商  ZETEX [Zetex Semiconductors]
网页  http://www.diodes.com/
标志 ZETEX - Zetex Semiconductors

ZHT2431C02 数据表(HTML) 2 Page - Zetex Semiconductors

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ELECTRICAL CHARACTERISTICS
TEST CONDITIONS (Unless otherwise stated):Tamb=25°C
PARAMETER
SYMBOL
VALUE
UNITS CONDITIONS
MIN TYP MAX
Reference Voltage
2.5% Vref
1.21 1.24 1.27 V
IL=10mA (Fig1), VZ=Vref
Deviation of Reference Input
Voltage over Temperature
Vdev
5.0
15.0 mV
IL=10mA, VZ=Vref
Ta=full range (Fig1)
Ratio of the change in
Reference Voltage to the
Change in Cathode Voltage
∆Vref
∆VZ
0.5
2.0
mV/V VZ from Vref to 10V
IZ=10mA (Fig2)
Reference Input Current
Iref
0.02 0.11 0.4
µA
R1=10K, R2=O/C, lL=10mA
(Fig2)
Deviation of Reference Input
Current over Temperature
∆
Iref
0.02 0.2
µA
R1=10K, R2=O/C, IL=10mA
Ta=full range (Fig2)
Minimum Cathode Current
for Regulation
IZmin
30
100 µA
†
Off-state Current
IZoff
10
30
µA
VZ=15V, Vref =0V (Fig3)
Dynamic Output
Impedance
RZ
0.25 2
Ω
VZ=Vref (Fig1), f=0Hz,
IL=10mA
Deviation of reference input voltage, Vdev, is defined as the maximum variation of the
reference input voltage over the full temperature range.
The average temperature coefficient of the reference input voltage, Vref is defined as:
Vref (
ppm⁄ °C)=
Vdev x 1000000
Vref (T1−T2)
The dynamic output impedance, Rz, is defined
as:
RZ =
∆VZ
∆IZ
When the device is programmed with two
external resistors, R1 and R2, (fig 2) , the
dynamic output impedance of the overall
circuit, R’, is defined as:
R
’=Rz 
1+
R1
R2
† With a capacitance of greater than 100pF
between cathode and anode, minimum
cathode current must be 0.2mA.
Vmax
Vmin
T1
T2
Vdev = Vmax - Vmin
Temperature
ZHT2431
ABSOLUTE MAXIMUM RATING
Cathode Voltage (VZ)
15V
Cathode Current
50mA
Operating Temperature
-55 to 125°C
Storage Temperature
-55 to 125°C
Recommended Operating Conditions
Cathode Voltage (min)VREF to (max) 15V
Cathode Current (min) 100µA to (max) 25mA
Power Dissipation (Tamb=25°C, Tjmax=150°C)
SOT23
330mW
TO92
780mW



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