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STGAP1ASTR 数据表(PDF) 19 Page - STMicroelectronics

部件名 STGAP1ASTR
功能描述  Automotive galvanically isolated advanced single gate driver
PDF  70 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGAP1ASTR 数据表(HTML) 19 Page - STMicroelectronics

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DocID029344 Rev 2
19/70
STGAP1AS
Electrical characteristics
70
tVCECLoff
19
VCE clamping time-out
-
2
2.30
2.60
µs
tVCECL
VCE clamping
intervention time(1)
--
20
-
ns
ASC function
VASCl
24
Low logic level voltage
-
0.80
1.10
1.40
V
VASCh
High logic level voltage
-
1.80
2.20
2.40
V
IASCh
ASC logic “1” input bias
current
VASC = 5 V
55
100
145
µA
IASCl
ASC logic “0” input bias
current
VASC = 0 V
-
-
0.10
µA
RASC
ASC pull-down
resistors
VASC = 5 V
35
50
70
k
tASC
ASC intervention time
VASC = 5 V
100
-
250
ns
Functionality checks
tGchk
20, 21
Gate path check time
(GON/GOFF)(2)
--
-
30
µs
VGchk
20
Gate path check
voltage (GON)
-
0.7 x VH
0.76 x VH
0.84 x VH
V
tRchk
16
SENSE resistor check
time
--
-
15
µs
IGOFFchk
21
GOFF path check
current
-
-420
-350
-280
µA
ISENSERchk
16
SENSE resistor check
current
VSENSE < 1 V
8
10
12
µA
tSENSEchk
SENSE comparator
check time
--
-
15
µs
tDESATchk
18
DESAT comparator
check time
--
-
15
µs
Overtemperature protection
TWN
-
Warning temperature(1)
-
125
-
-
°C
TSD
-
Shutdown
temperature(1)
-
155
-
-
°C
Thys
-
Temperature
hysteresis(1)
--
20
-
°C
Standby
ISTBY_VDD
7
VDD standby current
VDD = 5 V
0.40
0.80
1
mA
tsleep
-
Standby time
SD = '0',
measured from CS rise
500
700
900
ns
tawake
-
Logic wake-up time(1)
SD = '1'
5
-
-
µs
Table 6. DC operation electrical characteristics
(Tj = -40 to 125 °C, VDD = 5 V; VH = 15 V, VL = GNDISO) (continued)
Symbol
Pin
Parameter
Test condition
Min.
Typ.
Max.
Unit



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