2SA1822 datasheet(1/2 Pages) ISC

部件名	2SA1822

功能描述	Silicon PNP Power Transistor

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website： www.iscsemi.com

isc & iscsemi is registered trademark

1

isc Silicon PNP Power Transistor

2SA1822

DESCRIPTION

·

High Collector-Emitter Breakdown Voltage

·

Excellent switching time

·

100% avalanche tested

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

High voltage switching applications.

·

High speed DC-DC converter application

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-400

V

VCEO

Collector-Emitter Voltage

-400

V

VEBO

Emitter-Base Voltage

-7

V

IC

Collector Current-Continuous

-1

A

IB

Base Current-Continuous

-0.5

A

PC

Collector Power Dissipation

@Ta=25℃

2

W

Collector Power Dissipation

@TC=25℃

25

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

类似零件编号 - 2SA1822

制造商	部件名	数据表	功能描述
Toshiba Semiconductor	2SA1822	152Kb / 3P	TRANSISTOR (HIGH VOLTAGE SWITCHING, SPEED DC-DC CONVERTER APPLICATIONS)

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