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2SB520 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB520 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SB520 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0 -140 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -8 V V(BR)CBO Collector-Base breakdown voltage IC=-1mA; IE= 0 -200 V VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -0.7A -1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -7A; IB= -0.7A -1.5 V ICBO Collector Cutoff Current VCB= -200V; IE= 0 -100 μ A ICEO Collector Cutoff Current VCE= -140V; IB= 0 -100 μ A IEBO Emitter Cutoff Current VEB= -8V; IC= 0 -10 μ A hFE DC Current Gain IC= -5A; VCE= -2V 50 fT Current-Gain—Bandwidth Product IC=-0.5A ; VCE= -10V 15 MHz |
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