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2SB522 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB522 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SB522 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0 -60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -8 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.15A -0.4 V VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -0.15A -1.2 V ICBO Collector Cutoff Current VCB= -50V; IE= 0 -100 μ A IEBO Emitter Cutoff Current VEB= -8V; IC= 0 -10 μ A hFE DC Current Gain IC= -2.5A; VCE= -2V 50 fT Current-Gain—Bandwidth Product IC=-0.2A ; VCE= -5V 7 MHz |
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