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LM342 数据表(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部件名 LM342
功能描述  3-Terminal Positive Regulators
PDF  6 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

LM342 数据表(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If MilitaryAerospace specified devices are required
please contact the National Semiconductor Sales
OfficeDistributors for availability and specifications
Input Voltage
VO e 5V
30V
VO e 12V and 15V
35V
Internal Power Dissipation
Internally Limited
Operating Temperature Range
0 Cto a70 C
Maximum Junction Temperature
125 C
Storage Temperature Range
b
65 Cto a150 C
Lead Temperature (Soldering 10 sec)
300 C
ESD Susceptibility
TBD
Electrical Characteristics TA e 0 Cto a70 C IO e 250 mA (Note 2) unless noted
Output Voltage
5V
12V
15V
Input Voltage (unless otherwise noted)
10V
19V
23V
Units
Symbol
Parameter
Conditions
Min Typ Max Min Typ Min
Min
Typ
Max
VO
Output Voltage
TJ e 25 C
48
5
52
115
12
125
144
15
156
V
(Note 3)
1mA s IO s 250 mA and
475
525 114
126 1425
1575
V
VMIN s VIN s VMAX
(75sVINs20) (148sVINs27)
(18sVINs30)
D
VO
Line Regulation
TJ e 25 C IO e 250 mA
55
100
100
mV
(73sVINs25) (146sVINs30)
(177sVINs30)
D
VO
Load Regulation
TJ e 25 C 1mA s IO s 250 mA
50
120
150
mV
D
VO
Long Term Stability
20
48
60
mVkhrs
IQ
Quiescent Current
TJ e 25 C6
6
6
mA
D
IQ
Quiescent Current
TJ e 25 C 1mA s IO s 250 mA
05
05
05
mA
Change
TJ e 25 C VMIN s VIN s VMAX
15
15
15
mA
(73sVINs25) (146sVINs30)
(177sVINs30)
Vn
Output Noise Voltage TJ e 25 C f e 10 Hz–10 kHz
40
96
120
m
V
D
VIN
D
VOUT
Ripple Rejection
f e 120 Hz
50
64
44
56
42
56
dB
Input Voltage
TJ e 25 C IO e 250 mA
Required to Maintain
73
146
177
V
Line Regulation
Thermal Resistance
P Package
15
15
15
CW
Junction to Case
Thermal Resistance
P Package
80
80
80
CW
Junction to Ambient
Note 1
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur Operating Ratings indicate conditions for which the device is
intended to be functional but do not guarantee specific performance limits For guaranteed specifications and test conditions see the Electrical Characteristics
Note 2
The electrical characteristics data represent pulse test conditions with junction temperatures as shown at the initiation of tests
Note 3
The temperature coefficient of VOUT is typically within 001% VO C
2



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