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LM3478MM 数据表(PDF) 18 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
部件名 LM3478MM
功能描述  High Efficiency Low-Side N-Channel Controller for Switching Regulator
PDF  21 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

LM3478MM 数据表(HTML) 18 Page - National Semiconductor (TI)

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Designing SEPIC Using LM3478
(Continued)
The duty cycle of a SEPIC is given by:
In the above equation, V
Q is the on-state voltage of the
MOSFET, Q, and V
DIODE is the forward voltage drop of the
diode.
POWER MOSFET SELECTION
As in boost converter, the parameters governing the selec-
tion of the MOSFET are the minimum threshold voltage,
V
TH(MIN), the on-resistance, RDS(ON), the total gate charge,
Q
g, the reverse transfer capacitance, CRSS, and the maxi-
mum drain to source voltage, V
DS(MAX). The peak switch
voltage in a SEPIC is given by:
V
SW(PEAK) =VIN +VOUT +VDIODE
The selected MOSFET should satisfy the condition:
V
DS(MAX) > VSW(PEAK)
The peak switch current is given by:
The rms current through the switch is given by:
POWER DIODE SELECTION
The Power diode must be selected to handle the peak
current and the peak reverse voltage. In a SEPIC, the diode
peak current is the same as the switch peak current. The
off-state voltage or peak reverse voltage of the diode is V
IN
+V
OUT. Similar to the boost converter, the average diode
current is equal to the output current. Schottky diodes are
recommended.
SELECTION OF INDUCTORS L1 AND L2
Proper selection of the inductors L1 and L2 to maintain
constant current mode requires calculations of the following
parameters.
Average current in the inductors:
I
L2AVE =IOUT
Peak to peak ripple current, to calculate core loss if neces-
sary:
Maintaining the condition I
L >
∆i
L to ensure constant current
mode yields:
10135544
FIGURE 12. Typical SEPIC Converter
www.national.com
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