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BC846ASG-AL6-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 BC846ASG-AL6-R
功能描述  Suitable for automatic insertion in thick and thin-film circuits
PDF  3 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

BC846ASG-AL6-R 数据表(HTML) 2 Page - Unisonic Technologies

  BC846ASG-AL6-R Datasheet HTML 1Page - Unisonic Technologies BC846ASG-AL6-R Datasheet HTML 2Page - Unisonic Technologies BC846ASG-AL6-R Datasheet HTML 3Page - Unisonic Technologies  
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BC846AS
Preliminary
DUAL TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R221-036 .a
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
65
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
100
mA
Peak Collector Current
ICM
200
mA
Peak Emitter Current
IEM
200
mA
Power Dissipation
PD
325
mW
Operating Temperature Range
TJ
-40 ~ +150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
384.6
°C/W
Note: Device mounted on FR-4 PCB minimum land pad.
ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
V(BR)CBO IC=10μA, IB=0
80
V
Collector-Emitter Breakdown Voltage
V(BR)CEO IC=10mA, IB=0
65
V
Emitter-Base Breakdown Voltage
V(BR)EBO IE=1μA, IC=0
6
V
ON CHARACTERISTICS
DC Current Gain
hFE
VCE=5.0V, IC=2.0mA
110
220
IC=10mA, IB=0.5mA
90
250
mV
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=100mA, IB=5.0mA
200
600
mV
IC=10mA, IB=0.5mA
700
mV
Base-Emitter Saturation Voltage
VBE(SAT)
IC=100mA, IB=5.0mA
900
mV
VCE=5.0V, IC=2.0mA
580
660
700
mV
Base-Emitter Voltage
VBE(ON)
VCE=5.0V, IC=10mA
770
mV
SMALL SIGNAL CHARACTERISTICS
ICES
VCE=80V
15
nA
VCB=40V
15
nA
Collector-Cutoff Current
ICBO
VCB=30V, TA=150°C
5
µA
Gain Bandwidth Product
fT
VCE=5.0V, IC=10mA,
f=100MHz
100
MHz
Collector-Base Capacitance
CCB
VCB=10V, f=1.0MHz
2
pF
Note: Short duration pulse test used to minimize self-heating effect.



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