L8532G-S08-R datasheet(7/8 Pages) UTC

7 / 8 page

L8532

Preliminary

LINEAR INTEGRATED CIRCUIT

UNISONICTECHNOLOGIESCO.,LTD

7 of 8

www.unisonic.com.tw

QW-R125-041..a



ELECTRICAL CHARACTERISTICS (Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

ZERO CURRENT DETECTION

ZCD Arming Threshold

VZCD(ARM)

VZCD=Increasing

1.25

1.4

1.55

ZCD Triggering Threshold

VZCD(TRIG) VZCD=Decreasing

0.6

0.7

0.83

ZCD Hysteresis

VZCD(HYS)

500

700

900

ZCD Bias Current

IZCD

VZCD= 5V

-2

Positive Clamp Voltage

VCL(POS)

IZCD=3mA

Negative Clamp Voltage

VCL(NEG)

IZCD=-2mA

-0.9

-0.7

-0.5

ZCD Propagation Delay

tZCD

VZCD=2V~0V ramp,

dV/dt=20V/us,

VZCD=VCD(TRIG) o VDRV= 90%

200

270

Minimum ZCD Pulse Width

tSYNC

Maximum Off Time in Absence

of ZCD Transition

tstart

Falling VDRV=10% to Rising,

DRV=90%

165

300

DRIVE

ROH

Isource=100mA

Drive Resistance

ROL

ISINK=100mA

Ω

Rise Time

trise

10%~90%

Fall Time

tfall

90% to 10%

Drive Low Voltage

Vout(start)

VCC=VCC(on)-200mV,

Isink=10mA

0.2

CURRENT SENSE

Current Sense Voltage

Threshold

VILIM

0.45

0.5

0.55

Leading Edge Blanking Duration

tLEB

VCS=2V, VDRV= 90%~10%

100

195

350

Overcurrent Detection

Propagation Delay

tCS

dV/dt=10V/us,

VCS=VILIM to VDRV= 10%

100

170

Current Sense Bias Current

ICS

VCS= 2 V

-1

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