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Data Sheet

RRL035P03

*1 Limited only by maximum temperature allowed.

*2 Pw

d 10Ps, Duty cycle d 1%

*3 Mounted on a ceramic board (30×30×0.8mm)

*4 Mounted on a FR4 (15×20×0.8mm)

*5 Pulsed

:

Transconductance

*5

10V, I

3.5A

2.3

6.5

-

S

Gate input resistannce

f = 1MHz, open drain

-

19

-

m

:

4.5V, I

1.7A

-

52

72

4.0V, I

1.7A

-

58

81

10V, I

3.5A, T

Static drain - source

on - state resistance

*5

10V, I

3.5A

-

36

50

-

52

73

V

Gate threshold voltage

temperature coefficient

ΔV

(GS)th

ΔT

j

1mA

referenced to 25°C

-

3.9

-

mV/°C

Gate threshold voltage

10V, I

1mA

1.0

-

2.5

PA

Gate - Source leakage current

r20V, V

-

-

r10

PA

Zero gate voltage drain current

30V, V

-

-

1

V

Breakdown voltage

temperature coefficient

ΔV

(BR)DSS

ΔT

j

1mA

referenced to 25°C

-

25

-

mV/°C

Drain - Source breakdown

voltage

1mA

30

-

-

zElectrical characteristics(T

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

zThermal resistance

Parameter

Symbol

Values

Unit

Min.

Typ.

Max.

*4

-

-

391

°C/W

*3

-

-

125

°C/W

Thermal resistance, junction - ambient

2/11

2012.09 - Rev.B

FRA

2016.06 - Rev.B