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MAT02S_DIE 数据表(PDF) 2 Page - Analog Devices |
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MAT02S_DIE 数据表(HTML) 2 Page - Analog Devices |
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2 / 6 page ![]() Collector to Base Voltage (BVCBO)…............................... 40V Collector to Emitter Voltage (BVCEO)..….......................... 40V Emitter to Emitter Voltage (BVEE)..................................... 40V Collector Current (IC) ....................................................... 20mA Emitter Current (IE) .......................................................... 20mA Storage Temperature Range ......................................... -65°C to +150°C Junction Temperature (TJ)…………………………………..+150°C Operating Ambient Temperature Range…...................... -55°C to +125°C Absolute Maximum Ratings Notes: 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. In accordance with class-K version of MIL-PRF-38534, Appendix C, Table C-II, except as modified herein. (a) Qual Sample Size and Qual Acceptance Criteria – 25/2 (b) Qual Sample Package – 6 Lead TO Package (c) Pre-screen electrical test over temperature performed post-assembly prior to die qualification. |
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