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2SD312 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD312 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2SD312 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ 600 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 0.1A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 0.5A; IB= 0.1A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 100 μ A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μ A hFE-1 DC Current Gain IC= 0.1A; VCE= 5V 10 40 hFE-2 DC Current Gain IC= 0.5A; VCE= 5V 6 fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V 5 MHz COB Output Capacitance IE= 0; VCB= 10V 30 pF |
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