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2SD1370 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1370 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Darlington Power Transistor 2SD1370 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 6mA 2.5 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 100 μ A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3.0 mA hFE -1 DC Current Gain IC= 0.5A ; VCE= 3V 1000 15000 hFE -2 DC Current Gain IC= 3A ; VCE= 3V 1000 Switching times ton Turn-on Time IC= 3A , IB1= IB2= 6mA RL= 15Ω; VCC= 45V PW=20μs; Duty Cycle≤1% 0.8 μ s tstg Storage Time 3.0 μ s tf Fall Time 1.0 μ s |
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