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2SD1607 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1607 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Darlington Power Transistor 2SD1607 DESCRIPTION · High DC Current Gain- : hFE = 1000(Min)@ IC= 5A · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 120V(Min) · Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 5A · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for general purpose amplifier and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current- Continuous 0.5 A PC Collector Power Dissipation @TC=25℃ 40 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
类似零件编号 - 2SD1607 |
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类似说明 - 2SD1607 |
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